Ukusetshenziswa kwe-Mosfet, IGBT kanye ne-vacuum triode emshinini wokushisa wokungenisa izimboni (isithando somlilo)
Okwesimanje Amandla Okushisa Okungeniswayo Ubuchwepheshe bokuphakela ngokuyinhloko buthembele ezinhlotsheni ezintathu zamadivayisi kagesi angumongo: i-MOSFET, IGBT ne-vacuum triode, ngayinye edlala indima engenakuthathelwa indawo ezimeni ezithile zohlelo lokusebenza. I-MOSFET isibe yinketho yokuqala emkhakheni wokushisisa okunembayo ngenxa yezici zayo ezinhle kakhulu zemvamisa ephezulu (100kHz-1MHz), futhi ifaneleka ikakhulukazi ezimeni ezisebenza ngamandla aphansi nezinembe kakhulu njengokuncibilika kobucwebe kanye nokushisela izingxenye ze-elekthronikhi. Phakathi kwazo, i-SiC/GaN MOSFET inyuse ukusebenza kahle kwaba ngaphezu kuka-90%, kodwa umkhawulo wayo wamandla (ngokuvamile u-
Emkhakheni we-medium-frequency namandla aphezulu (1kHz-100kHz), i-IGBT ibonise inzuzo eqinile yokuncintisana. Njengesisetshenziswa esiyinhloko seziko lokuncibilika kwezimboni nensimbi Ukwelashwa Kokushisa imigqa yokukhiqiza, amamojula e-IGBT angakwazi ukufinyelela kalula ukuphuma kwamandla wezinga le-MW. Ubuchwepheshe bayo obuvuthiwe kanye nokusebenza kahle kwezindleko kwenza kube ukukhetha okujwayelekile kokucubungula izinto ezifana nensimbi ne-aluminium alloys. Ngokwethulwa kobuchwepheshe be-SiC, imvamisa yokusebenza yesizukulwane esisha se-IGBT idlule ku-50kHz, iqhubeka nokuhlanganisa ukubusa kwayo kwemakethe ebhendini ye-medium-frequency.
Ezimweni ze-ultra-high-frequency namandla aphezulu (1MHz-30MHz), ama-vacuum triodes asagcina indawo enganyakaziki. Noma ngabe ukuncibilika kwensimbi okukhethekile, ukukhiqizwa kwe-plasma, noma okokusakaza, ama-vacuum triode anganikeza amandla okukhipha amandla azinzile ezingeni le-MW. Ukumelana ne-high-voltage yayo eyingqayizivele kanye nesakhiwo esilula sedrayivu kuyenza ibe yisinqumo esihle sokucubungula izinsimbi ezisebenzayo ezifana ne-titanium ne-zirconium, naphezu kokusebenza kahle kwayo okuphansi (50% -70%) kanye nezindleko eziphezulu zokunakekelwa.
Intuthuko yezobuchwepheshe yamanje ikhombisa inkambiso ecacile yokuhlangana: I-MOSFET iyaqhubeka nokungena ezinkambini ze-high-frequency kanye namandla aphezulu ngokusebenzisa ubuchwepheshe be-SiC/GaN; I-IGBT iyaqhubeka nokwandisa ibhande lemvamisa yokusebenza ngokusungula izinto ezintsha; kuyilapho amashubhu e-vacuum ebhekana nengcindezi yokuncintisana evela kumadivayisi esimo esiqinile kuyilapho egcina izinzuzo zawo zemvamisa ephezulu kakhulu. Lokhu kuvelela kobuchwepheshe kubumba kabusha indawo yezimboni yezinto zokushisisa zokungeniswa.
Ekukhetheni kwangempela, onjiniyela badinga ukucabangela ngokucophelela izici ezintathu ezinkulu zokuvama, amandla kanye nomnotho: I-MOSFET ikhethwa kuma-high-frequency namandla aphansi, i-IGBT ikhethelwa i-medium-frequency namandla aphezulu, kanti ama-vacuum triode asadingeka kuma-ultra-high frequency namandla aphezulu. Ngokuthuthuka kobuchwepheshe be-wide-bandgap semiconductor, leli zinga lokukhetha lingashintsha, kodwa esikhathini esizayo esibonakalayo, izinhlobo ezintathu zamadivayisi zizoqhubeka zidlala indima ebalulekile ezindaweni zazo ezizuzisayo, futhi zikhuthaze ngokuhlanganyela ukuthuthukiswa kobuchwepheshe bokushisisa bokungeniswa ukuze bufinyelele isiqondiso esisebenza kahle nesinembayo.
